 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD2150 Transistors Low Frequency Transistor (20V, 3A) 2SD2150 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 2) Excellent current gain characteristics. 3) Complements the 2SB1424. External dimensions (Unit : mm) 2SD2150 0.50.1 4.5+0.2 -0.1 1.60.1 1.5 +0.2 -0.1 4.00.3 2.5+0.2 -0.1 (1) (2) (3) 0.40.1 1.50.1 1.00.2 0.4+0.1 -0.05 0.40.1 1.50.1 0.50.1 3.00.2 Structure Epitaxial planar type NPN silicon transistor (1) Base (2) Collector ROHM : MPT3 (3) Emitter EIAJ : SC-62 Abbreviated symbol: CF Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 40 20 6 3 5 0.5 Unit V V V A (DC) A (Pulse) W W 1 2 Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 2 150 -55 to +150 C C 1 Single pulse Pw=10ms 2 Mounted on a 40x40x0.7mm Ceramic substrate. Rev.A 1/3 2SD2150 Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 20 6 - - - 120 - - Typ. - - - - - 0.2 - 290 25 Max. - - - 0.1 0.1 0.5 560 - - Unit V V V IC=50A IC=1mA IE=50A VCB=30V VEB=5V Conditions A A V - MHz pF IC/IB=2A/0.1A VCE=2V, IC=0.1A VCE=2V, IE= -0.5A, f=100MHz VCE=10V, IE=0A, f=1MHz Measured using pulse current. Packaging specifications and hFE Package Code Type 2SD2150 hFE RS Basic ordering unit (pieces) Taping T100 1000 hFE values are classified as follows : Item hFE R 180 to 390 S 270 to 560 Electrical characteristic curves 10 5 COLLECTOR CURRENT : IC (A) VCE=2V 2 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.6 20mA 18mA 16mA 14mA Ta=25C 12mA 10mA 8mA 6mA 5 50mA 45mA 40mA 4 Ta=25C 35mA 30mA 25mA 20mA 15mA 10mA Ta=100C 25C -40C 1.2 3 4mA 0.8 2 5mA 1 IB=0A 1 2 3 4 5 2mA 0.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.2 0.4 0.6 0.8 IB=0A 1.0 0 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SD2150 Transistors 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 2 1 0.5 0.2 0.1 50m 20m 10m 5m Ta=100C 25C -40C IC/IB=10 1 lC/lB=20 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100C 25C -40C Ta=100C 25C -40C 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector curren ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 50m 20m 10m 5m Ta=100C 25C -40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 1000 500 200 100 50 20 10 5 2 1 -1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25C VCE=2V 1000 500 Ta=25C f=1MHz IE=0A IC=0A Cob 200 100 Cob 50 20 10 0.1 0.2 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 -2 -5 -10 -20 -50-100 -200-500-1000 EMITTER CURRENT : IE (mA) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of 2SD2150
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |